ARCADIA is a project of INFN targeting the development of a novel CMOS sensor platform, operated in full depletion, thus allowing charge collection faster than current MAPS based on charge diffusion, like ALPIDE. ARCADIA grounds on the heritage of two previous INFN projects, SEED and MATISSE, aiming at
ARCADIA envisages solutions for sensor thicknesses in the range , featuring small charge collecting electrodes to optimise the signal-to-noise ratio.
One of the main advancements with respect of state-of-the-art technologies is the reduction of the power consumption, lowered to . The project is based on a standard 110nm CMOS technology (quad-well, both PMOS and NMOS), with a customised process for a patterned backside, developed in collaboration with LFoundry. ARCADIA adopts scalability as first and foremost criterion of development, being one of the key-projects in Europe for the development of next-generation monolithic CMOS devices.
The group of Trento includes members from TIFPA, from the Department of Physics and from the Department of Industrial Engineering. It greatly contributed to the sensor design (Geant4 and TCAD simulations), both for the main pixel main demonstrator and for different geometries. In the next future, it will play a key-role in testing the demonstrators at with laser and particle beams.